代做ECEN7003 Microelectronic Circuit Design Project-1代做Prolog
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Microelectronic Circuit Design
Project-1
MOSFET Characteristic Analysis and Single-stage Amplifier Design
Part-I MOSFET Characteristic Analysis and Simulation
Part-I Objectives:
1. Basic I-V characteristic:
(1) Based on the simulated results, analyze the ID -VDS, ID -VGS relations of 1.2-V NMOS;
(2) figure out the operation regions;
(3) estimate the corresponding gm & rout from their definitions.
(Hint: by doing parametric analysis in Cadence)2. Body effect and short-channel effect:
Simulate, observe, and try to discuss the effect from VSB and channel length L on the Vth of 1.2-V NMOS.
3. Simulation vs hand-calculation of ID:
Obtain the parameters of μnCox and λ (channel length modulation coefficient) for 1.2-V NMOS from simulation. Use them in the hand calculation of ID then compare the calculated result with the simulated ones.
(Hint: the ‘betaeff’ parameter in DC analysis simulation result represent the ‘μnCoxW/L’)
Part-II Single-stage Amplifier Design and Simulation
Part-II Objectives:
1. Schematic design and simulation:
Use 1.2-V CMOS devices to design and simulate CS, CG, and SF amplifiers. (Body effect discussion is suggested)
2. Layout implementation (*optional bonus):
For the designed CS amplifier, perform. DRC/LVS check and try to run post-layout simulations with RC extraction
Design Specifications for 1.2-V Amplifiers:
CS CG SF (CD)
Gain >20 dB >20 dB >-2 dB
GBW >500 MHz >500 MHz >600 MHz
Power < 0.6 mW < 0.6 mW < 0.6 mW
Supply Voltage 1.2V
Capacitive Load 1 pF
• The overall achieved performance would be the higher, the better, i.e., higher gain, larger GBW, lower power, and smaller area.
Important:
➢ Individual project report submission due: 15 Oct. 2024, 00:00
➢ Project-1 is an individual project. It is required to complete it and submit the report individually.
➢ Report guideline can be found in UMMoodle.